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| ZXMC3AM832 MPPSTM Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count 3mm x 2mm Dual Die MLP FEATURES * Low on - resistance * Fast switching speed * Low threshold * Low gate drive * 3mm x 2mm MLP APPLICATIONS * MOSFET gate drive * LCD backlight inverters * Motor control D2 PINOUT 5 D2 6 D1 7 D1 8 ORDERING INFORMATION DEVICE ZXMC3AM832TA ZXMC3AM832TC REEL 7'` 13'` TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units G2 S2 G1 S1 4 3 2 1 3 x 2 Dual MLP DEVICE MARKING C01 underside view PROVISIONAL ISSUE E - JULY 2004 1 ZXMC3AM832 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 C (b)(f) @V GS =10V; T A =25 C (b)(f) @V GS =10V; T A =25 C (a)(f) Pulsed Drain Current Continuous Source Current (Body Diode) (b)(f) Pulsed Source Current (Body Diode) Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor SYMBOL V DSS V GS ID N-Channel 30 20 3.7 3.0 2.9 12.4 2.4 12.4 1.5 12 2.45 19.6 1 8 1.13 8 1.7 13.6 P-Channel -30 20 -2.7 -2.2 -2.1 -9.2 -2.8 -9.2 UNIT V V A A A A A W mW/C W mW/C W mW/C W mW/C W mW/C I DM IS I SM PD PD PD PD PD THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g) Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW. (a)(f) SYMBOL R JA R JA R JA R JA R JA R JA VALUE 83.3 51 125 111 73.5 41.7 UNIT C/W C/W C/W C/W C/W C/W PROVISIONAL ISSUE E - JULY 2004 2 ZXMC3AM832 TYPICAL CHARACTERISTICS -ID Drain Current (A) 10 Limited RDS(ON) ID Drain Current (A) DS(ON) 10 Limited R 1 DC 1s 100ms Note (a)(f) 10ms 1ms 100us 1 DC 1s 100ms 10ms Note (a)(f) 1ms 100us 100m 100m 10m Single Pulse, Tamb=25C 10m Single Pulse, Tamb=25C 1 10 1 10 N-channel Safe Operating Area 3.5 VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) P-channel Safe Operating Area Max Power Dissipation (W) 2oz Cu Note (e)(g) 2oz Cu Note (a)(f) 1oz Cu Note (d)(g) Thermal Resistance (C/W) 80 60 Note (a)(f) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1oz Cu Note (d)(f) D=0.5 40 20 D=0.2 Single Pulse D=0.05 D=0.1 0 100 1m 10m 100m 1 10 100 1k 25 50 75 100 125 150 Pulse Width (s) Temperature (C) Transient Thermal Impedance 3.5 3.0 Derating Curve 225 200 175 150 125 100 75 50 25 0 0.1 Thermal Resistance (C/W) PD Dissipation (W) 2.5 2.0 1.5 1.0 0.5 0.0 0.1 Tamb=25C Tj max=150C Continuous 2oz copper Note (f) 2oz copper Note (g) 1oz copper Note (f) 1oz copper Note (g) 1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (f) 2oz copper Note (g) 1 10 100 1 10 100 Board Cu Area (sqcm) Board Cu Area (sqcm) Power Dissipation v Board Area Thermal Resistance v Board Area PROVISIONAL ISSUE E - JULY 2004 3 ZXMC3AM832 N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 30 0.5 100 1 0.106 3.5 0.12 0.18 V A nA V S I D =250A, V GS =0V V DS =30V, V GS =0V V GS =20V, V DS =0V I =250A, V DS = V GS D V GS =10V, I D =2.5A V GS =4.5V, I D =2.0A V DS =4.5V,I D =2.5A Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge NOTES (3) C iss C oss C rss 190 38 20 pF pF pF V DS =25 V, V GS =0V, f=1MHz t d(on) tr t d(off) tf Qg Qg Q gs Q gd 1.7 2.3 6.6 2.9 2.3 3.9 0.6 0.9 ns ns ns ns nC nC nC nC V DS =15V,V GS =10V, I D =2.5A V DS =15V,V GS =5V, I D =2.5A V DD =15V, I D =2.5A R G =6.0, V GS =10V V SD t rr Q rr 0.85 17.7 13.0 0.95 V ns nC T J =25C, I S =1.7A, V GS =0V T J =25C, I F =2.5A, di/dt= 100A/s (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE E - JULY 2004 4 ZXMC3AM832 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs -30 1 100 -0.8 0.210 0.330 2.48 V A nA V S I D =-250A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D V GS =-10V, I D =-1.4A V GS =-4.5V, I D =-1.1A V DS =-15V,I D =-1.4A C iss C oss C rss 204 39.8 25.8 pF pF pF V DS =-15 V, V GS =0V, f=1MHz Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge NOTES (3) t d(on) tr t d(off) tf Qg Qg Q gs Q gd 1.5 2.8 11.3 7.5 2.58 5.15 0.65 0.92 ns ns ns ns nC nC nC nC V DS =-15V,V GS =-10V, I D =-1.4A V DS =-15V,V GS =-5V, I D =-1.4A V DD =-15V, I D =-1A R G =6.0, V GS =-10V V SD t rr Q rr -0.85 18.6 14.8 -0.95 V ns nC T J =25C, I S =-1.1A, V GS =0V T J =25C, I F =-0.95A, di/dt= 100A/s (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE E - JULY 2004 5 ZXMC3AM832 N-CHANNEL TYPICAL CHARACTERISTICS ID Drain Current (A) 4V 3.5V ID Drain Current (A) 10 T = 25C 10V 7V 5V 4.5V T = 150C 10V 7V 5V 4.5V 4V 3.5V 3V 2.5V VGS 10 1 VGS 3V 1 0.1 0.1 1 10 2.5V 0.1 2V VDS Drain-Source Voltage (V) 0.1 Output Characteristics VDS Drain-Source Voltage (V) 1 10 Output Characteristics VGS = 10V ID = 2.5A 10 1.6 Normalised RDS(on) and VGS(th) ID Drain Current (A) VDS = 10V 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 RDS(on) T = 150C 1 VGS(th) VGS = VDS ID = 250uA T = 25C 0.1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 50 100 150 Typical Transfer Characteristics 2.5V VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Normalised Curves v Temperature ISD Reverse Drain Current (A) 10 T = 150C 3V 3.5V 4V VGS 4.5V 5V 7V RDS(on) Drain-Source On-Resistance 1 1 T = 25C 0.1 10V T = 25C 0.1 0.4 0.6 0.8 1.0 1.2 0.1 ID Drain Current (A) 1 10 VSD Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE E - JULY 2004 6 ZXMC3AM832 N-CHANNEL TYPICAL CHARACTERISTICS 300 10 VGS Gate-Source Voltage (V) C Capacitance (pF) 250 200 150 100 50 0 0.1 1 CISS COSS VGS = 0V f = 1MHz ID = 2.5A 8 6 4 2 0 0 1 2 3 4 VDS = 15V CRSS 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Q - Charge (nC) Gate-Source Voltage v Gate Charge PROVISIONAL ISSUE E - JULY 2004 7 ZXMC3AM832 P-CHANNEL TYPICAL CHARACTERISTICS 10 T = 25C 10V -ID Drain Current (A) -ID Drain Current (A) 5V 1 4V 3.5V 3V 2.5V -VGS 2V 10 T = 150C 10V 5V 4V 3.5V 3V 2.5V 2V 1 0.1 0.1 -VGS 1.5V 0.01 0.1 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 1.6 Output Characteristics Normalised RDS(on) and VGS(th) -ID Drain Current (A) 1.4 1.2 1.0 VGS = -10V ID = -1.4A RDS(on) T = 150C 1 T = 25C VGS(th) 0.1 1 2 3 0.8 0.6 -50 0 -VDS = 10V VGS = VDS ID = -250uA 4 5 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 100 2V -VGS 2.5V 3V 3.5V 4V T = 25C Normalised Curves v Temperature 10 T = 150C -ISD Reverse Drain Current (A) 10 1 T = 25C 1 5V 10V 0.1 0.1 0.1 1 10 0.01 0.2 On-Resistance v Drain Current -ID Drain Current (A) -VSD Source-Drain Voltage (V) 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Diode Forward Voltage PROVISIONAL ISSUE E - JULY 2004 8 ZXMC3AM832 P-CHANNEL TYPICAL CHARACTERISTICS 300 10 C Capacitance (pF) 250 200 150 100 50 0 0.1 1 CISS COSS -VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz ID = -1.4A 8 6 4 2 VDS = -15V CRSS 10 0 0 2 4 6 -VDS - Drain - Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge PROVISIONAL ISSUE E - JULY 2004 9 ZXMC3AM832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETERS APPROX. CONVERTED DIMENSIONS IN INCHES PACKAGE DIMENSIONS Millimeters DIM A A1 A2 A3 b b1 D D2 D3 Min 0.80 0.00 0.65 0.15 0.24 0.17 Max 1.00 0.05 0.75 0.25 0.34 0.30 Min 0.0315 0.00 0.0256 0.006 0.0095 0.0068 Inches Max 0.0394 0.002 0.0295 0.0098 0.0134 0.0118 DIM e E E2 L L2 r 0 Millimeters Min Max Min Inches Max 0.65 BSC 2.00 BSC 0.43 0.20 0.00 0.63 0.45 0.125 0.0256 BSC 0.0787 BSC 0.017 0.0079 0.00 0.0248 0.0177 0.005 0.075 BSC 12 - 0.0029 BSC 0 12 - 3.00 BSC 0.82 1.01 1.02 1.21 0.118 BSC 0.0323 0.0398 0.0402 0.0476 (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE E - JULY 2004 10 |
Price & Availability of ZXMC3AM832
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